United States Patent 3,511,723
May 12, 1970

Method For Production Of Epitaxial Films
John W. Burd

Filed December 16, 1966
Image of US PATENT 3,511,723

Abstract of the Disclosure

The method of producing a semiconductor material by depositing an epitaxial coating on a semiconductor-type substrate. An epitaxial reaction gas is introduced to a first zone which is maintained at a temperature within the range of 400-1100 C. The reaction gas which is preferably formed from a III-V compound is introduced into a second zone where it is contacted with a suitably employed dopant. The temperature in the second zone is raised substantially above the temperature in the first zone to within a range of 500 C. to 1200 C. Thereafter, the reaction gas with the dopant is introduced into a third zone or isothermal zone where the temperature is lowered to a temperature within the range of 400 C. to 1100 C. The substrates are rotated in said isothermal zone with respect to the entering stream of gas and the dopant so that the gas and dopant move uniformily over the substrates to cause an epitaxial film in the gas to be deposited on the substrates which are located in the isothermal zone.
Figure descriptions: cover graphic

  • Figure 1 is a vertical sectional view showing in side elevation an apparatus for the production of epitaxial films constructed in accordance
  • Figures 2 and 3 are vertical sectional views taken along lines 2-2 and 3-3, respectively of Figure 1.

 Citations [54]:
3,233,578 02/1966 Capita 3,301,213 01/1967 Grochowski 3,361,600 01/1968 Reisman
National Museum of American History
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