Abstract of the Disclosure

A process for producing semiconductor devices on a thin layer of semiconductor material which is bonded to an electrically insulating substrate. A protective coating is provided on a portion of the layer and conductivity determining dopands are diffused into the semiconductor to an effective diffusion depth greater than the thickness of the layer. This dopes through its entire thickness a region of the semiconductor extending beneath the coating. The interface between the doped and undoped regions forms a semiconductor junction which is essentially perpendicular to the substrate. A second semiconductor region may be simultaneously or subsequently diffused thereby producing in the layer a channel of unchanged conductivity type semiconductor material, the channel having adjacent regions of different resistivity.

• Figure 1 shows a perspective view in partial section and partial elevation of the device fabricated in accordance with the method of the present invention.
• Figure 2 is a plan view of the initial material.
• Figure 3 is a sectional view along line 3-3 of Figure 2.
• Figure 4 is a plan view showing a semiconductor material region with appropriate masking.
• Figure 5 is a sectional view along line 5-5 of Figure 4.

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