Abstract of the Disclosure

Method of making field-effect devices wherein the source and drain regions or extensions of such regions already formed are provided by coating the surface of a semiconductor body adjacent a metal gate thereon with a dopant material and then bombarding this dopant layer with inert ions to drive the dopant atoms into the semiconductor except where the gate masks the body from the inert ion bombardment.

• Figures 1(a) through 1(d) are cross-sectional elevational views of portions of an insulated-gate field-effect device in various stages of fabrication to form source and drain regions by indirect implantation according to the invention.
• Figure 2 is a perspective view, partly in section, of a completed insulated-gate field-effect device fabricated according to the invention.

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