United States Patent 3,514,845
June 2, 1970

Method Of Making Integrated Circuits With Complementary Elements
Wilhelm H. Legat
Alan F. Dixon

Filed August 16, 1968
Image of US PATENT 3,514,845

Abstract of the Disclosure

A semiconductor device which comprises a number of complementary metal-oxide-silicon transistors, such as the field-effect type, in a single integrated circuit, and method of making such a device wherein a semiconductor substrate is oriented in a preferred direction and etched to provide cavities having sides substantially identical profiles. The cavities are then filled in with single crystal material of opposite conductivity.
Figure descriptions: cover graphic

  • Figure 1 is an isometric view of a portion of an integrated circuit device embodying this invention.
  • Figure 2 is an enlarged isometric view of one of the transistors of the device shown in Figure 1 further illustrating how contacts to the source and drain regions are made.
  • Figures 3 and 4 are elevational views illustrating steps employed in the process of manufacturing the integrated circuit device of the invention.

 Citations [54]:
3,370,995 02/1968 Lowery 3,423,651 01/1969 Legat 3,425,879 02/1969 Shaw
National Museum of American History
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