United States Patent 3,515,576
June 2, 1970

Single Crystal Silicon On Beryllium Oxide
H.M. Manasevit

Filed January 26, 1966
Image of US PATENT 3,515,576

Abstract of the Disclosure

This invention is directed to a composite structure comprising a substrate of single crystal beryllium oxide and a film of single crystal silicon epitaxially disposed atop said substrate.
Figure descriptions: cover graphic

  • Figure 1 is a representation of a composite of this invention shown in section on a greatly enlarged scale.
  • Figure 2a is a pyramid representation of one natural facet of beryllium oxide.
  • Figure 2b is a prism representation of a second natural facet of beryllium oxide.
  • Figure 2c is a platelet representation of a third natural facet of beryllium oxide.

 Citations [54]:
2,925,357 02/1960 Kothen 3,063,871 11/1962 Barkemeyer et al 3,373,051 03/1968 Chu et al
National Museum of American History
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