United States Patent 3,517,198
June 23, 1970

Light Emitting And Absorbing Devices
Herbert R. Phillipp

Filed December 1, 1966
Image of US PATENT 3,517,198

Abstract of the Disclosure

An antireflecting coating of silicon nitride is used for minimizing reflections at the interface between a semiconductor device which either emits or absorbs electromagnetic radiation and the medium in which the device is used by selecting an index of refraction which is substantially equal to the square root of the product of the indices of the device and the medium. The index of refraction of silicon nitride coating is preselected by preselecting the temperature at which the coating is produced, either by glow discharge dissociation of gases, pyrolytic decomposition of gases, or otherwise. The thickness of the coating is selected so that the product of the coating thickness and coating index of refraction is substantially equal to an odd number of quarter wavelengths of radiation to be passed.
Figure descriptions: cover graphic

  • Figure 1 is a perspective view, partially broken away, of a light emitting device in accord with this invention.
  • Figure 2 is a perspective view, partially broken away, of a light absorbing device in accord with this invention.

 Citations [54]:
2,784,639 03/1957 Keenan 3,246,214 04/1966 Hugle 3,076,861 02/1963 Samulon 3,247,014 04/1966 Goldberger 1,190,308 03/1959 France 3,114,652 12/1963 Shetky 3,247,392 04/1966 Thelen 3,122,450 02/1964 Barnes 3,354,316 11/1967 Deverall 3,160,522 12/1964 Heywang
National Museum of American History
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