United States Patent 3,518,503
June 30, 1970

Semiconductor Structures Of Single Crystals On Polycrystalline Substrates
Ven Y. Doo

Filed March 30, 1970
Image of US PATENT 3,518,503

Abstract of the Disclosure

A semiconductor device composed of a polycrystalline ceramic substrate, such as polycrystalline aluminum oxide, having on its surface at least one thin homogeneous single crystal semiconductor film. The single crystal film is in the order of microns in thickness and in the order of hundreds of microns in length and width. An epitaxial layer of semiconductor material of the same conductivity type as the single crystal film is grown over the film. A PN junction is formed in the epitaxial layer by provision of a region of an opposite conductivity in the epitaxial layer.
Figure descriptions: cover graphic

  • Figures 1 to 3 are elevational views representing a series of stages in the formation of thin homogeneous single crystals of a first material as a thin film on a substrate of a polycrystalline second material.
  • Figure 4 is a top plan view of the structure represented in Figure 3.

 Citations [54]:
3,265,905 08/1966 McNeil 3,283,221 11/1966 Heiman 3,326,729 06/1967 Sigler 3,290,753 12/1966 Chiang
National Museum of American History
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