Abstract of the Disclosure

A semiconductor device composed of a polycrystalline ceramic substrate, such as polycrystalline aluminum oxide, having on its surface at least one thin homogeneous single crystal semiconductor film. The single crystal film is in the order of microns in thickness and in the order of hundreds of microns in length and width. An epitaxial layer of semiconductor material of the same conductivity type as the single crystal film is grown over the film. A PN junction is formed in the epitaxial layer by provision of a region of an opposite conductivity in the epitaxial layer.

• Figures 1 to 3 are elevational views representing a series of stages in the formation of thin homogeneous single crystals of a first material as a thin film on a substrate of a polycrystalline second material.
• Figure 4 is a top plan view of the structure represented in Figure 3.

 Citations [54]:
  
3,265,905  08/1966  McNeil
3,283,221  11/1966  Heiman
3,326,729  06/1967  Sigler
3,290,753  12/1966  Chiang