United States Patent 3,518,506
June 30, 1970

Semiconductor Device With Contact Metallurgy Thereon, And Method For Making Same
Harlan R. Gates

Filed December 6, 1967
Image of US PATENT 3,518,506

Abstract of the Disclosure

A semiconductor device having contact metallization thereon designed for high reliability and stability, and capable of high current carrying capacity, comprising a current-distributing metallization layer contacting the active areas of said device through a first insulating layer, a second metallization layer contacting the current-distributing layer through a second insulating layer, a third metallization layer contacting said second metallization layer through a third insulating layer, external contact being made to the third metallization layer. The first two metallization layers may be aluminum, the final layer a series of layers, such as chrome-nickel-gold, and the insulating layers may be SiO2.
Figure descriptions: cover graphic

  • Figure 1 represents a prior art metallization contact structure, and a metallization contact structure of this invention.
  • Figures 3 and 4 represent successive steps in the method of making the device of this invention.

 Citations [54]:
2,816,847 12/1957 Shockley 3,304,595 02/1967 Sato 3,124,640 03/1964 Armstrong 3,309,585 03/1967 Forrest 3,214,652 10/1965 Knowles 3,325,706 06/1967 Kruper 3,225,261 12/1965 Wolf 3,287,612 11/1966 Lepselter
National Museum of American History
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