Abstract of the Disclosure

A semiconductor structure including insulated-gate field-effect transistors of complementary types in a single semiconductor substrate, wherein the length of the channel of each transistor is determined by the thickness of an epitaxial layer. This is accomplished by forming a plurality of epitaxial layers of different conductivity types on the substrate, forming recesses exposing edges of the epitaxial layers, and disposing insulating material on said edges and gate electrodes on the insulating material. In each transistor so formed one epitaxial layer serves as either the source or drain region while an adjacent layer serves to provide the channel region.

• Figures 1a to 1e show in cross-section successive stages in a fabrication of complementary devices in the same slice of semiconductor material according to the invention.

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