United States Patent 3,518,750
July 7, 1970

Method Of Manufacturing A MISFET
Kenneth J. Moyle

Filed October 2, 1968
Image of US PATENT 3,518,750

Abstract of the Disclosure

A novel MISFET and method of manufacture involving a five mask process suitable for making N-channel devices alone, P-channel devices alone or both N and P-channel devices simultaneously. Novel topside contact means, field inversion protection means and gate breakdown protection means are disclosed.
Figure descriptions: cover graphic

  • Figures 1-9 illustrate steps in the five-mask process used in making a MISFET in accordance with the present invention.

 Citations [54]:
3,183,128 05/1965 Leistiko 3,226,612 12/1965 Haenichen 3,456,169 07/1969 Klein
National Museum of American History
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