Abstract of the Disclosure

A g;ass-encapsulated, small junction semiconductor diode is assembled by a procedure which involves "bump plating" the semiconductor die to provide a gold contact built up about one mil above the surrounding surface of the semiconductor die. The die is then bonded to the lead terminal within the tubular glass housing of a "first seal" subassembly. A gold plated, beaded lead subassembly is then inserted through the open end of the first seal subassembly whereby the gold plated end of the beaded lead comes to rest upon the gold bump of the semiconductor die. Finally, in a single heating step, a thermally induced pressure weld of the gold plated electrode to the gold bump is obtained, simultaneously with the fusing of the beaded lead to the glass housing of the first seal, to complete the packaged device.

• Figure 1 is an elevational view in cross section, showing the features of a completed device assembled in accordance with the invention.
• Figure 2 is a detailed perspective view of the semiconductor die to the lead terminal of the first seal subassembly.
• Figure 3 illustrates the step of bonding the semiconductor die to the lead terminal of the first seal subassembly.
• Figure 4 illustrates the final stage of assembly involving the fusion of the beaded lead to the glass housing of the first seal subassembly, and also including the formation of a thermally induced pressure weld of the beaded lead to the bump-plated electrode of the semiconductor die.

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