Abstract of the Disclosure

A novel metal-insulator-semiconductor capacitor device and method of manufacture wherein means are provided for narrowly defining the boundaries of the inversion region lying beneath the metallic electrode disposed on the surface of the semiconductor chip. An impurity region highly doped with an appropriate dopant is provided around the intentional inversion region for delimiting the area thereof as well as prohibiting an unintentional expansion of this area due to spurious inversion of the substrate surface caused by accumulation of surface charge on the overlying dielectric.

• Figure 1 is a plan view of a prior are metal-insulator-semiconductor capacitor, illustrating the effects of surface charge inversion.
• Figure 2 is a cross-section of the capacitor of Figure 1, taken along the line 2-2, and showing the substrate in its inverted condition.
• Figures 3 through 7 illustrate exemplary operative steps which may be followed in manufacturing a metal-insulator-semiconductor capacitor in accordance with the subject invention.
• Figure 8 is a plan view of a metal-insulator-semiconductor capacitor, illustrating the novel features of the present invention.
• Figure 9 is a cross-section of the capacitor of Figure 8, taken along the line 9-9, illustrating the inverted substrate.

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