Abstract of the Disclosure

A semiconductor device having a substrate as the collector region, a base region in the substrate, a plurality of partial emitter regions formed on the base region connected together, and a buffer region within each partial emitter region, said buffer regions having a conductivity type opposite to that of the emitter regions, which makes possible a higher power capability with high stability over a wide operating range.

• Figure 1 is a perspective view of an embodiment of this invention, with a part of it cut away.
• Figure 2 shows a cross section of a part of the embodiment observed along line 2-2 in the direction of arrows shown in Figure 1.

 Citations [54]:
  
3,022,568  02/1962  Nelson et al
3,309,537  03/1967  Archer
3,379,584  04,1968  Bean et al
3,427,511  02/1969  Rosenzweig
3,430,110  02/1969  Goshgarian