United States Patent 3,519,898
July 7, 1970

High Power Semiconductor Device Having A Plurality Of Emitter Regions
Teruo Nakatani

Filed January 30, 1968
Image of US PATENT 3,519,898

Abstract of the Disclosure

A semiconductor device having a substrate as the collector region, a base region in the substrate, a plurality of partial emitter regions formed on the base region connected together, and a buffer region within each partial emitter region, said buffer regions having a conductivity type opposite to that of the emitter regions, which makes possible a higher power capability with high stability over a wide operating range.
Figure descriptions: cover graphic

  • Figure 1 is a perspective view of an embodiment of this invention, with a part of it cut away.
  • Figure 2 shows a cross section of a part of the embodiment observed along line 2-2 in the direction of arrows shown in Figure 1.

 Citations [54]:
3,022,568 02/1962 Nelson et al 3,309,537 03/1967 Archer 3,379,584 04,1968 Bean et al 3,427,511 02/1969 Rosenzweig 3,430,110 02/1969 Goshgarian
National Museum of American History
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