United States Patent 3,524,113
August 11, 1970

Colementary PNP-NPN Transistors And Fabrication Method Thereof
Benjamin Agusta
Neil D. Lubart

Filed June 15, 1967
Image of US PATENT 3,524,113

Abstract of the Disclosure

This disclosure is primarily directed to the fabrication and construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. The devices of this disclosure us an isolation-type diffused region to form at least an emitter region thereby permitting the formation of complementary devices with both emitters having a high injection efficiency.
Figure descriptions: cover graphic

  • Figure 1 illustrates, in cross-section, the steps in the process for fabricating a complementary transistor structure in accordance with one embodiment of this invention.

 Citations [54]:
3,370,995 02/1968 Lowery 3,380,153 04/1968 Husher et al 3,423,653 01/1969 Chang 3,327,182 06/1967 Kisinko 3,177,414 04/1965 Kurosawa et al 3,221,215 11/1965 Osafune et al 3,260,902 07/1966 Porter
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments