United States Patent 3,525,909
August 25, 1970

Transistors For Use In An Emitter Circuit With Extended Emitter Electrode
Gunther Eberhard
Richard Wiesner

Filed September 8, 1967
Image of US PATENT 3,525,909

Abstract of the Disclosure

The present invention relates to a semiconductor device with at least one transistor, operated in an emitter circuit, whose surface is coated, at least in a region bridging the base region, with an insulating protective layer, preferably comprised of SiO2 or Si3N4. In accordance with the present invention, the emitter electrode extends beyond the collector region, in an electrode portion seated directly upon the insulating protective layer. The protective layer is usually a thin layer of an insulation material, preferably of SiO2 or Si3N4.
Figure descriptions: cover graphic

  • Figure 1 shows the known planar technique of arranging transistors.
  • Figure 2 shows the present invention.
  • Figure 3 shows another embodiment of the invention.
  • Figures 4 and 5 show still other embodiments.

 Citations [54]:
2,981,877 04/1961 Noyce 3,292,057 12/1966 Touchy 3,336,508 08/1967 Preletz 3,426,253 02/1969 Rocque 3,204,321 09/1965 Kile 3,373,323 03/1968 Wolfrum et al 3,316,466 04/1967 Husa et al
National Museum of American History
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