United States Patent 3,533,158
October 13, 1970

Method Of Utilizing An Ion Beam To Form Custom Circuits
Robert W. Bower

Filed October 30, 1967
Image of US PATENT 3,533,158

Abstract of the Disclosure

Custom MOSFET circuits are formed by selectively scanning an array of incomplete, or latent, insulated-gate offset-drain transistors with an ion beam of predetermined dopant species and dimension to activate the devices and complete the circuit.
Figure descriptions: cover graphic

  • Figure 1 is a cross-sectional elevational view of a portion of an insulated-gate offset-drain-transistor (IGOST) in an incomplete, or latent, condition.
  • Figure 2 is a view as in Figure 1, showing additionally an ion-implanted, or activated, region which completes the structure.
  • Figure 3 is a variable logic diagram of an array of activated IGOSTS or MOSFET circuit.
  • Figure 4 is a schematic diagram of the circuit of Figure 3.
  • Figure 5 is a diagrammatic view shown partially in section of the circuit of Figures 3 and 4 as a device.

 Citations [54]:
3,388,009 06/1968 King 3,413,531 11/1968 Leith
National Museum of American History
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