Abstract of the Disclosure

Custom MOSFET circuits are formed by selectively scanning an array of incomplete, or latent, insulated-gate offset-drain transistors with an ion beam of predetermined dopant species and dimension to activate the devices and complete the circuit.

• Figure 1 is a cross-sectional elevational view of a portion of an insulated-gate offset-drain-transistor (IGOST) in an incomplete, or latent, condition.
• Figure 2 is a view as in Figure 1, showing additionally an ion-implanted, or activated, region which completes the structure.
• Figure 3 is a variable logic diagram of an array of activated IGOSTS or MOSFET circuit.
• Figure 4 is a schematic diagram of the circuit of Figure 3.
• Figure 5 is a diagrammatic view shown partially in section of the circuit of Figures 3 and 4 as a device.

 Citations [54]:
  
3,388,009  06/1968  King
3,413,531  11/1968  Leith