United States Patent 3,534,231
October 13, 1970

Low Bulk Leakage Current Avalanche Photodiode
James R. Biard

Filed February 15, 1968
Image of US PATENT 3,534,231

Abstract of the Disclosure

Disclosed is an avalanche photodiode having a highly doped semiconductor back region within a diffusion length of the front photodiode junction to reduce the bulk leakage current.
Figure descriptions: cover graphic

  • Figure 1 is a pictorial view, partially in section, illustrating the preferred embodiment of the invention.
  • Figure 2 is a pictorial view, partially in section, illustrating another embodiment of the invention.

 Citations [54]:
3,275,910 09/1966 Phillips 3,378,915 04/1968 Zenner 3,292,010 12/1966 Hackley 3,410,735 11/1968 Hackley 3,319,138 05/1967 Bergman et al 3,323,955 06/1967 Jochems et al 3,359,137 12/1967 Kaye et al
National Museum of American History
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