United States Patent 3,534,234
October 13, 1970

Modified Planar Process For Making Semiconductor Devices Having Ultrafine Mesa Type Geometry
Loyd H. Clevenger

Filed December 15, 1966
Image of US PATENT 3,534,234

Abstract of the Disclosure

Semiconductor devices are made by a modified planar process which permits ohmic contacts to be made to smaller geometries than heretofore possible. A semiconductor mesa structure is surrounded with an insulating layer having an exposed surface coplanar with the exposed surface of the mesa. The desired PN junction geometry is then formed in the mesa by selective diffusion, followed by metallization to provide ohmic contacts that extend beyond the periphery of the mesa, since the smallest contact geometry provided by the state of the art is too large to be accommodated wholly within such periphery.
Figure descriptions: cover graphic

  • Figures 1a-1e are sectional views of a portion of a semiconductor substrate illustrating one embodiment of the mesa fabrication according to the invention.

 Citations [54]:
3,304,595 02/1967 Sato 3,345,222 10/1967 Nomura 2,972,092 02/1961 Nelson
National Museum of American History
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