Abstract of the Disclosure

A semiconductor component is sealed in a housing by an intermediate portion of thixotropic fusible synthetic material which fills the gap formed between an under housing member and an over housing member in a gas-tight manner. The under housing member supports the semiconductor component and the over housing member covers the semiconductor component.

• Figure 1 is a view, partly in section, of a first embodiment of the semiconductor device of the present invention, prior to heating.
• Figure 2 is a view, partly in section, of the embodiment of Figure 1 subsequent to heating.
• Figure 3 is a view, partly in section,of a second embodiment of the semiconductor device of the present invention, prior to heating.

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