United States Patent 3,537,889
November 3, 1970

Low Temperature Formation Of Oxide Layers On Silicon Elements Of Semiconductor Devices
Edwin J. Mets
Ralph I. Jurgensen

Filed October 31, 1968
Image of US PATENT 3,537,889

Abstract of the Disclosure

A saturated solution of a thermally decomposable compound of a glass forming metal, such as a lead or arsenic salt or oxide, is prepared in water. A porous ceramic fixture which is designed to contain a silicon wafer during a subsequent glass-forming step is immersed in the solution until saturated. The fixture is removed and dried. A silicon element is placed in the fixture, and the fixture is inserted into a preheated furnace having a flowing oxygen atmosphere. The furnace temperature permits oxidation of all exposed element surfaces, and the thermally liberated metal migrates to the silicon element surface to accelerate oxidation. A thick, uniform glass surface layer may be formed. A contact element may be soldered to the silicon element before placement in the fixture, or a portion of the glass may be etched from the surface to permit subsequent attachment of a contact element.
Figure descriptions: cover graphic

  • Figure 1 is a flow diagram of the process of this invention.
  • Figure 2 is an isometric view of a ceramic fixture with silicon elements in place.
  • Figure 3 is a vertical section of a silicon element having electrical contacts attached and an oxide layer on the remaining surfaces.

 Citations [54]:
3,377,220 04/1968 Chamberlin et al 3,442,700 05/1969 Yoshioka et al 3,447,958 06/1969 Okutsu et al
National Museum of American History
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