United States Patent 3,540,925
November 17, 1970

Ion Bombardment of Insulated Gate Semiconductor Devices
Terry G. Athanas
David M. Griswold

Filed August 2, 1967
Image of US PATENT 3,540,925

Abstract of the Disclosure

A process for manufacturing an insulated gate field effect transistor in which the dielectric layer underlying the gate electrode is subjected to ion bombardment prior to deposition of the gate electrode on the dielectric layer. The purpose of the ion bombardment process is to modify the mutual conductance, low frequency noise, and temperature coefficient characteristics of the transistor. The ion bombardment is accomplished by (i) placing the partially completed device in an argon atmosphere at low pressure, (ii) applying a high voltage between electrodes exposed to the argon gas to ionize the gas and initiate a glow discharge, and (iii) leaving the device in the glow discharge region for a predetermined time so that ions from the discharge region bombard the dielectric layer.
Figure descriptions: cover graphic

  • Figure 1 shows an insulated gate semiconductor device manufactured according to the invention.
  • Figure 2 shows apparatus used for practicing the ion bombardment process of the invention.
  • Figure 3, 4, and 5 show graphs of results obtained by the ion bombardment process of the invention.

 Citations [54]:
3,298,863 01/1967 McCusker 2,891,203 03/1954 Thornton
National Museum of American History
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