Abstract of the Disclosure

Nitride insulating films suitable for utilization both as a capacitor dielectric and an encapsulating material are formed by reactively evaporating a source of aluminum, boron or silicon in an ammonia atmosphere greater than 1x10^-5 torr and slowly depositing the evaporated source upon a substrate heated above 185° C. Subsequent to the insulating film deposition, ammonia is fed back into the evaporation chamber to produce an ammonia pressure greater than 1 micron wherein the insulating film is heat treated and cooled. To inhibit shorting of the insulating film resulting from a charge build-up of high energy electrons on the insulating film, the deposition of electrodes atop the insulating film is accomplished utilizing filament evaporation.

• Figure 1 is a flow chart depicting in block diagram form the method of this invention.
• Figure 2 is a sectional view of a thin film capacitor formed by the method of this invention.
• Figure 3 is a pictorial illustration of a semiconductive sturcture employing the nitride insulating film as an encapsulating agent.

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