United States Patent 3,540,926
November 17, 1970

Nitride Insulating Films Deposited by Reactive Evaporation
John R. Rairden III

Filed October 9, 1968
Image of US PATENT 3,540,926

Abstract of the Disclosure

Nitride insulating films suitable for utilization both as a capacitor dielectric and an encapsulating material are formed by reactively evaporating a source of aluminum, boron or silicon in an ammonia atmosphere greater than 1x10-5 torr and slowly depositing the evaporated source upon a substrate heated above 185 C. Subsequent to the insulating film deposition, ammonia is fed back into the evaporation chamber to produce an ammonia pressure greater than 1 micron wherein the insulating film is heat treated and cooled. To inhibit shorting of the insulating film resulting from a charge build-up of high energy electrons on the insulating film, the deposition of electrodes atop the insulating film is accomplished utilizing filament evaporation.
Figure descriptions: cover graphic

  • Figure 1 is a flow chart depicting in block diagram form the method of this invention.
  • Figure 2 is a sectional view of a thin film capacitor formed by the method of this invention.
  • Figure 3 is a pictorial illustration of a semiconductive sturcture employing the nitride insulating film as an encapsulating agent.

 Citations [54]:
3,095,527 06/1963 Barnes et al. 3,368,919 02/1968 Casale et al. 3,413,090 11/1968 Krock et al. 3,419,761 12/1968 Pennebaker 3,429,020 02/1969 Diefendorf 3,449,092 06/1969 Hammond 3,492,153 01/1970 Ervin
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