Abstract of the Disclosure

This application discloses guardring structures adapted for use with Schottky barrier devices to decrease the leakage current and increase the reverse breakdown voltage. In particular, Schottky barrier devices, including diodes and particle detectors, are provided with p-n junction and metal-insulator-semiconductor (MIS) guardrings. In addition, a Schottky barrier device having a closure guardring is also disclosed.

• Figures 1A and 1B illustrate Schottky barrier devices having a metal-insulator-semiconductor guardring in accordance with the invention.
• Figures 2A and 2B illustrate Schottky barrier devices having a p-n junction guardring in accordance with the invention.
• Figure 3 illustrates a Schottky barrier diode having a closure guardring in accordance with the invention.

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3,405,329  10/1968  Loro et al.
3,463,971  08/1969  Soshea et al.