United States Patent 3,544,399
December 1, 1970

Insulated Gate Field-Effect Transistor (IGFET) with Semiconductor Gate Electrode
Hans G. Dill

Filed October 26, 1966
Image of US PATENT 3,544,399

Abstract of the Disclosure

An insulated gate field-effect transistor in which the gate member is of semiconductor material formed on and insulated from the semiconductor body prior to the formation of the source and drain so that the gate may be used as a mask against diffusion to form the source and drain regions without critical and difficult gate alignment problems.
Figure descriptions: cover graphic

  • Figures 1(a) through (h) are cross-sectional elevational views of a portion of a field-effect device according to the invention at various steps in the manufacture thereof.

 Citations [54]:
3,102,230 08/1963 Kahng 3,189,973 06/1965 Edwards et al. 3,355,637 11/1967 Johnson 3,421,055 01/1969 Bean 3,475,234 10/1969 Kerwin et al.
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments