Abstract of the Disclosure

An insulated gate field-effect transistor in which the gate member is of semiconductor material formed on and insulated from the semiconductor body prior to the formation of the source and drain so that the gate may be used as a mask against diffusion to form the source and drain regions without critical and difficult gate alignment problems.

• Figures 1(a) through (h) are cross-sectional elevational views of a portion of a field-effect device according to the invention at various steps in the manufacture thereof.

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