United States Patent 3,544,790
December 1, 1970

An Electron Beam Masking Arrangement
Martin J. Brown

Filed March 1, 1968
Image of US PATENT 3,544,790

Abstract of the Disclosure

An improved mask provides increased resolution of a substrate pattern delineated by electron beam radiation-induced polymerization over selected portions of a coating on the substrate. A peripheral lip extending from the bottom of the mask penetrates the coating and contacts the substrate to prevent electrons scattered from the substrate portions adjacent the mask from penetrating and curing the coating portion below the mask. The remainder of the scattered energy is dissipated in an internal cavity defined by the inner surface of the lip and the bottom of the mask.
Figure descriptions: cover graphic

  • Figure 1 is a top view of a substrate which is delineated with a pattern of square regions.
  • Figure 2 is an elevational view, partially in diagrammatic form, illustrating an electron beam radiation technique for delineating the square regions of Figure 1 with the aid of a prior art masking arrangement.
  • Figure 3 is an enlarged elevational view of a portion of the prior art arrangement of Figure 2, illustrating diagrammatically the penetration of scattered electrons beneath the mask.
  • Figure 4 is an enlarged elevational view similar to Figure 3 and depicting a mask constructed in accordance with the invention for effecting a marked reduction in penetration of the scattered electrons below the mask.

 Citations [54]:
1,517,970 02/1924 Evans 2,363,844 11/1944 Duggan 2,722,620 11/1955 Gale 2,783,164 02/1957 Hill 3,144,366 08/1964 Rideout et al. 3,226,255 12/1965 Cieniewicz et al. 3,358,239 12/1967 Franke et al.
National Museum of American History
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