PATENT COVER GRAPHIC

United States Patent 3,544,854
December 1, 1970

Ohmic Contacts for Gallium Arsenide Semiconductors
Ronald H. Cox
Hans A. Strack

Filed December 2, 1966
Image of US PATENT 3,544,854

Abstract of the Disclosure

A gallium arsenide semiconductor device is provided with an alloy contact comprising 50-98% by weight silver, 0.5-30% by weight indium, and 0.5-40% by weight dopant. In a preferred embodiment the contact is tin free and the dopant is germanium or zinc.
Figure descriptions: cover graphic

  • Figures 1 through 5 illustrate the main steps in the fabrication of contacts to gallium arsenide semiconductor devices utilizing the thermo-evaporative technique. 



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2,825,667  03/1958  Mueller
2,830,239  04/1958  Jenny
3,154,446  10/1964  Jones
3,224,911  12/1965  Williams et al.
3,225,273  12/1965  Bakker et al.
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