United States Patent 3,544,854
December 1, 1970

Ohmic Contacts for Gallium Arsenide Semiconductors
Ronald H. Cox
Hans A. Strack

Filed December 2, 1966
Image of US PATENT 3,544,854

Abstract of the Disclosure

A gallium arsenide semiconductor device is provided with an alloy contact comprising 50-98% by weight silver, 0.5-30% by weight indium, and 0.5-40% by weight dopant. In a preferred embodiment the contact is tin free and the dopant is germanium or zinc.
Figure descriptions: cover graphic

  • Figures 1 through 5 illustrate the main steps in the fabrication of contacts to gallium arsenide semiconductor devices utilizing the thermo-evaporative technique.

 Citations [54]:
2,825,667 03/1958 Mueller 2,830,239 04/1958 Jenny 3,154,446 10/1964 Jones 3,224,911 12/1965 Williams et al. 3,225,273 12/1965 Bakker et al.
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