United States Patent 3,544,858
December 1, 1970

Insulated Gate Field-Effect Transistor Comprising a Mesa Channel and a Thicker Surrounding Oxide
Else Kooi

Filed May 8, 1968
Image of US PATENT 3,544,858

Abstract of the Disclosure

An insulated gate field-effect transistor and a method of making same, in which the channel is provided in a mesa region of a silicon body, and the channel is surrounded by thicker silicon oxide over the adjacent source and drain regions. A thinner insulating layer is over the channel, and a gate electrode on the latter. The manufacturing method involves masking the channel region while growing silicon oxide around it causing the oxide to penetrate into the silicon areas surrounding the channel to provide the channel in a mesa surrounded by the oxide.
Figure descriptions: cover graphic

  • Figures 1 and 2 show an example of a semiconductor device according to the invention.

 Citations [54]:
3,233,186 02/1966 Theriault 3,344,322 09/1967 Dill
National Museum of American History
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