United States Patent 3,544,862
December 1, 1970

Integrated Semiconductor and PN-Junction Capacitor
Robert C. Gallagher
David W. Williams

Filed September 20, 1968
Image of US PATENT 3,544,862

Abstract of the Disclosure

An integrated semiconductor sturcture having a transistor element and a capacitor element; the capacitor element including emitter, base, and collector regions with PN junctions therebetween. The emitter region is provided with many interdigitated portions whereby a high perimeter to surface area ratio exists, and the total value of capacitance obtained from a given area is increased.
Figure descriptions: cover graphic

  • Figure 1 is a schematic view of one form of the invention.
  • Figure 2 is a plan view taken on the line II-II of Figure 1.
  • Figure 3 is a plan view of another embodiment of the device shown in Figure 2.
  • Figure 4 is a graph showing the characteristics of capacitance per unit area versus perimeter per unit area.
  • Figure 5 is a partial sectional view of one type of a PN junction useful in understanding the invention.

 Citations [54]:
3,225,261 12/1965 Wolf 3,256,587 06/1966 Hangstefer 3,355,669 11/1967 Avins
National Museum of American History
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