United States Patent 3,544,864
December 1, 1970

Solid State Field Effect Device
Paul Richman

Filed August 4, 1978
Image of US PATENT 3,544,864

Abstract of the Disclosure

An insulated-gate field effect device utilizing a high resistivity substrate in combination with low resistivity semiconductor regions of opposite conductivity type is described. The conducting channel produced by the application of a voltage to the gate electrode contains a PN junction for both positive and negative applied voltages. The location of the PN junction in the device is determined by the gate voltage and, consequently, the device exhibits several different modes of operation.
Figure descriptions: cover graphic

  • Figure 1 is a side view in section of one embodiment of the invention.
  • Figure 2 is an electrical symbol of the embodiment of Figure 1.
  • Figure 3 is a table showing the polarity of the different electrode voltages for the principal modes of operation of the invention.
  • Figure 4 is a curve showing the operating characteristics for one of the principal modes of operation.

 Citations [54]:
2,791,761 05/1957 Morton 3,264,493 08/1966 Price 3,283,170 11/1966 Buie 3,287,611 11/1966 Bockemuehl et al. 3,305,708 02/1967 Ditrick 3,378,688 04/1968 Kabell 3,045,129 07/1962 Atalla et al. 3,246,177 04/1966 Schroeder 3,296,462 01/1967 Reddi 3,321,680 05/1967 Arndt et al. 3,333,115 07/1967 Kawakami 3,334,281 08/1967 Ditrick 3,341,380 09/1967 Mets et al. 3,386,016 05/1968 Lindmayer
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