United States Patent 3,544,914
December 1, 1970

Semiconductor High Frequency Amplifier Device
Michihisa Suga

Filed March 11, 1969
Image of US PATENT 3,544,914

Abstract of the Disclosure

A semiconductor high frequency amplifier device i described. The device utilizes a semiconductor body made of a material having a bulk negative resistance effect of a field-control type. The body is provided with a metallic layer between cathode and anode electrodes to control the electric field distribution whereby substantially all of the region, except for a small portion adjacent the cathode, may support an electric field intensity above a threshold level needed to sustain a high field domain.
Figure descriptions: cover graphic

  • Figure 1 is a longitudinal sectional view of an embodiment of this invention
  • Figure 2 is a diagram showing the electric field intensity distribution in the embodiment in comparison with that of a conventional device.

 Citations [54]:
3,350,656 10/1967 Vural 3,439,236 04/1969 Bucher 3,464,020 08/1969 Koyama et al.
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