United States Patent 3,546,459
December 8, 1970

Single-Crystal, Drifted Semi-Conductor Radiation Detector Having a Bore Therethrough
Michael J. Higatsberger
Harald Hick

Filed March 17, 1967
Image of US PATENT 3,546,459

Abstract of the Disclosure

A method of producing a drifted semi-conductor detector which comprises the steps of producing a single-crystal which is bored through to form by the entire outer face of the single-crystal a first electrode and the face of the bore in the crystal a second electrode. Drift material is applied to one of the electrodes and a drifting process is brought about by applying voltage to the respective electrodes.
Figure descriptions: cover graphic

  • Figure 1 is a perspective front view of a single-crystal, by example, constituting a first embodiment of the present invention.
  • Figure 2 is a perspective front view of a second embodiment of the present invention.
  • Figure 3 is a top plan view of the crystal disclosed in Figure 2.

 Citations [54]:
1,863,843 06/1932 Grondahl 2,945,955 07/1960 Mossop et al. 3,005,100 10/1961 Thompson 3,225,198 12/1965 Mayer 3,378,414 04/1968 Freck et al.
National Museum of American History
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