Abstract of the Disclosure

A technique for producing a monolithic semiconductor structure having device isolation, according to which isolation moats or channels are formed in the monolith so as completely to surround each of the individual device "islands." These channels are isolating by virtue of the fact that they define PN junctions with the device islands and with the remainder of the substrate. The channels are simply formed by discrete diffusions into the monolith so that separately formed regions merge together to produce the desired channels.

• Figure 1 is a cross-sectional view of a portion of a monolithic semiconductor structure in accordance with the present invention and particularly illustrating an isolation channel surrounding a transistor device.
• Figures 2a through 2e show in cross-section the major steps in the method of the present invention for making the isolated device of figure 1.
• Figure 3 is a cross-sectional view of an underpass resistor fabricated by following the method of the present invention.

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