United States Patent 3,549,401
December 22, 1970

Method of Making Electroluminsecent Gallium Phosphide Diodes
Leonard J. Buszko
Luthor M. Foster
Max R. Lorenz

Filed December 20, 1966
Image of US PATENT 3,549,401

Abstract of the Disclosure

Gallium phosphide light emitting diodes with controlled amounts of the p-type impurity zinc and the n-type impurity oxygen in the p region immediately adjacent the junction are prepared by epitaxial growth from a solution. An n-type wafer of gallium phosphide having a highly polished surface is placed in a chamber together with a mixture containing GaP, Ga, Zn and Ga2O3. The chamber is evacuated, then filled with an inert gas and the mixture is then heated to about 1150 C. to form a liquid solution of gallium phosphide, zinc and oxygen dissolved in gallium. The container is then tipped so that the solid solution contacts the polished surface, and thereafter the wafer and solution are cooled to epitaxially grow the p-type gallium phosphide doped with sinc and oxygen int the desired amounts.
Figure descriptions: cover graphic

  • Figure 1 is a schematic showing how a boat is loaded prior to being placed into a furnace.
  • Figures 3, 4 and 5 are respectively the top, side and front views of the quartz boat and its contents used in the manufacturing of GaP diodes.
  • Figure 6 is a plot of a GaP liquidus curve.

 Citations [54]:
3,371,051 02/1968 Johnson et al 3,394,085 Westerveld et al. 3,411,946 11/1968 Tramposch
National Museum of American History
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