Abstract of the Disclosure

Gallium phosphide light emitting diodes with controlled amounts of the p-type impurity zinc and the n-type impurity oxygen in the p region immediately adjacent the junction are prepared by epitaxial growth from a solution. An n-type wafer of gallium phosphide having a highly polished surface is placed in a chamber together with a mixture containing GaP, Ga, Zn and Ga₂O₃. The chamber is evacuated, then filled with an inert gas and the mixture is then heated to about 1150° C. to form a liquid solution of gallium phosphide, zinc and oxygen dissolved in gallium. The container is then tipped so that the solid solution contacts the polished surface, and thereafter the wafer and solution are cooled to epitaxially grow the p-type gallium phosphide doped with sinc and oxygen int the desired amounts.

• Figure 1 is a schematic showing how a boat is loaded prior to being placed into a furnace.
• Figures 3, 4 and 5 are respectively the top, side and front views of the quartz boat and its contents used in the manufacturing of GaP diodes.
• Figure 6 is a plot of a GaP liquidus curve.

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3,371,051  02/1968  Johnson et al
3,394,085  Westerveld et al.
3,411,946  11/1968  Tramposch