United States Patent 3,549,411
December 22, 1970

Method Of Preparing Silicon Nitride Films
K.E. Bean
Paul S. Gleim

Filed June 27, 1967
Image of US PATENT 3,549,411

Abstract of the Disclosure

Disclosed is a method for adjusting various physical and chemical properties of chemically vapor deposited silicon nitride films by regulating the composition of the reactant gas stream. Among these properties are etch resistance, refractive index, relative dielectric constant, hardness, coefficient of thermal expansion, and thermal conductivity.
Figure descriptions: cover graphic

  • Figure 1 is a schematic diagram showing one form of apparatus utilized in depositing silicon nitride accordance with the method of the invention.

 Citations [54]:
3,017,251 01/1962 Kelemen 1,106,803 10/1965 Great Britain 1,136,315 04/1963 Germany 1,190,308 10/1959 France
National Museum of American History
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