United States Patent 3,551,842
December 29, 1970

Semiconductor Laser Having High Power Output And Reduced Threshold
Herbert Nelson

Filed March 27, 1968
Image of US PATENT 3,551,842

Abstract of the Disclosure

A semiconductor laser of the injection type in which the width of the light emitting region is greater than the length of the semiconductor body between the reflective surfaces which form the resonant optical cavity. Current flow is confined to a principal portion of the P-N junction plane. The remainder of the junction plane does not exhibit gain, and serves as a photon absorbing region to attenuate undesired parasitic optical modes, thus reducing the lasing threshold of the device.
Figure descriptions: cover graphic

  • Figure 1 shows an isometric view of an injection laser according to one embodiment of the invention.
  • Figure 2 shows a cross-sectional view of the laser of Figure 1, after the provision of electrodes thereto.
  • Figure 3 shows an isometric view of an injection laser (with parts broken away) according to a preferred embodiment of the invention.

 Citations [54]:
3,427,563 02/1969 Lasher 3,436,679 04/1969 Fenner
National Museum of American History
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