Abstract of the Disclosure

A semiconductor laser of the injection type in which the width of the light emitting region is greater than the length of the semiconductor body between the reflective surfaces which form the resonant optical cavity. Current flow is confined to a principal portion of the P-N junction plane. The remainder of the junction plane does not exhibit gain, and serves as a photon absorbing region to attenuate undesired parasitic optical modes, thus reducing the lasing threshold of the device.

• Figure 1 shows an isometric view of an injection laser according to one embodiment of the invention.
• Figure 2 shows a cross-sectional view of the laser of Figure 1, after the provision of electrodes thereto.
• Figure 3 shows an isometric view of an injection laser (with parts broken away) according to a preferred embodiment of the invention.

 Citations [54]:
  
3,427,563  02/1969  Lasher
3,436,679  04/1969  Fenner