United States Patent 3,553,541
January 5, 1971

Bilateral Switch Using Combination Of Field Effect Transistors And Bipolar Transistors
Ernam F. King

Filed April 17, 1969
Image of US PATENT 3,553,541

Abstract of the Disclosure

The functions of a plurality of insulated gate field effect transistors and bipolar transistors are combined in a compound device which is electrically symmetrical (bilateral) and which has a very high input impedance, low output impedance, and high current gain. The device is advantageously employed as a bilateral coupling element in digital integrated circuits, e.g., semiconductor memories, DC shift registers, and dynamic shift registers.
Figure descriptions: cover graphic

  • Figure 1 shows in schematic form the approximate circuit equivalent of the compound device in accordance with this invention.
  • Figure 2 shows an isometric cross section of an advantageous structural embodiment of the compound device in accordance with this invention.
  • Figure 3 shows a schematic circuit diagram illustrating the use of the compound device for connecting an IGFET memory cell to the digit lines in a semiconductor memory system.

 Citations [54]:
3,264,493 08/1966 Price 3,275,912 09/1969 Kunz 3,391,354 07/2968 Ohashi et al 3,492,505 01/1970 Entenmann
National Museum of American History
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