Abstract of the Disclosure

The functions of a plurality of insulated gate field effect transistors and bipolar transistors are combined in a compound device which is electrically symmetrical (bilateral) and which has a very high input impedance, low output impedance, and high current gain. The device is advantageously employed as a bilateral coupling element in digital integrated circuits, e.g., semiconductor memories, DC shift registers, and dynamic shift registers.

• Figure 1 shows in schematic form the approximate circuit equivalent of the compound device in accordance with this invention.
• Figure 2 shows an isometric cross section of an advantageous structural embodiment of the compound device in accordance with this invention.
• Figure 3 shows a schematic circuit diagram illustrating the use of the compound device for connecting an IGFET memory cell to the digit lines in a semiconductor memory system.

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