United States Patent 3,556,951
January 19, 1971

Method Of Forming Leads On Semiconductor Devices.
Nino P. Cerniglia
Richard C. Tonner

Filed August 4, 1967
Image of US PATENT 3,556,951

Abstract of the Disclosure

Method of forming supporting beam leads on a semiconductor wafer by depositing in succession thin layers of titanium, molybdenum, and gold, masking with non-conductive photo-resist, and electroplating gold to form thick members. The titanium, molybdenum, and gold not covered by the gold members are removed in a series of compatible steps leaving beam leads of titanium, molybdenum, and gold.
Figure descriptions: cover graphic

  • Figure 1 is a plan view of a fragment of a wafer of silicon within which the electrically active elements of a plurality of transistors have been formed by diffusion showing the coating of non-conductive silicon oxide and the openings in the coating to which contacts are to be made by supporting leads.
  • Figure 2 is an enlarged view of a portion of the fragment of Figure 1 taken in cross-section along the line 2-2 of Figure 1.

 Citations [54]:
3,256,588 06/1966 Siking et al
National Museum of American History
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