Abstract of the Disclosure

Method of forming supporting beam leads on a semiconductor wafer by depositing in succession thin layers of titanium, molybdenum, and gold, masking with non-conductive photo-resist, and electroplating gold to form thick members. The titanium, molybdenum, and gold not covered by the gold members are removed in a series of compatible steps leaving beam leads of titanium, molybdenum, and gold.

• Figure 1 is a plan view of a fragment of a wafer of silicon within which the electrically active elements of a plurality of transistors have been formed by diffusion showing the coating of non-conductive silicon oxide and the openings in the coating to which contacts are to be made by supporting leads.
• Figure 2 is an enlarged view of a portion of the fragment of Figure 1 taken in cross-section along the line 2-2 of Figure 1.

 Citations [54]:
  
3,256,588  06/1966  Siking et al