Abstract of the Disclosure

A method of processing semiconductor wafers wherein wafers having epitaxial layers containing diffusion regions which have been rejected due to electrical failures or visual defects can be economically processed and reclaimed for further device fabrication. The method utilizes the combination of an epitaxial layer and an overlying oxide layer to essentially eliminate auto-doping by impurities diffused or contained therein during subsequent fabrication steps.

• Figure 1 is a simplified flow chart illustrating a process uing the present invention.
• Figure 2 is a view in cross section of a semiconductor wafer formed after step 14 of Figure 1.
• Figure 3 is a view in cross section of a semiconductor wafer formed after step 24 of Figure 1.
• Figure 4 is a view in cross section of a semiconductor wafer formed after step 25 of Figure 1.
• Figure 5 is a view in cross section of a semiconductor wafer formed after step 29 of Figure 1.

 Citations [54]:
  
3,184,823  05/1965  Little et al
3,243,323  03/1966  Corrigan et al
3,345,222  10/1967  Nomura et al