Abstract of the Disclosure

The present invention relates to a method of forming a p-n junction in a semiconductor material wherein the region on one side of said p-n junction has a desired low dopant concentration and wherein said region is formed by doping said semiconductor material from a silicon dioxide layer made from a colloidal silicon dioxide-liquid-dispersion containing boron impurity atoms and counterdopant atoms.

• Figure 1 is a plan view of a silicon crystal which has been doped using only commercial grade colloidal silicon dioxide-liquid-dispersion.
• Figure 2 is a plan view of a silicon crystal which has been doped using counterdoped commercial grade colloidal silicon dioxide-liquid-dispersion.
• Figure 3 is a plan view of a silicon crystal which has been doped using counterdoped commercial grade colloidal silicon dioxide-liquid-dispersion.
• Figure 4 is a graph of the decrease in dopant concentration produced in the silicon crystals of Figures 1, 2 and 3 as a function of different amounts of counterdopant atoms depositied in units of commercial grade colloidal silicon dioxide-liquid-dispersion.
• Figure 5 is a plan view of a silicon crystal which has been doped using the decrease shown in Figure 4.

 Citations [54]:
  
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