United States Patent 3,560,810
February 2, 1971

Field Effect Transistor Having Passivated Gate Insulator
Pieter Balk
David W. Dong
Jerome M. Eldridge

Filed August 15, 1968
Image of US PATENT 3,560,810

Abstract of the Disclosure

An insulated-gate field effect transistor is described which includes a gate insulator defined as a laminate structure comprising a phosphosilicate glass (PSG) layer and a silicon dioxide (SiO2) layer, the ratio of the thicknesses of such layers and, also, the P2O5 concentration in the PSG layer being properly chosen to insure stable device characteristics over extended periods under operation conditions.
Figure descriptions: cover graphic

  • an insulated-gate field effect transistor fabricated in accordance with the present invention.

 Citations [54]:
3,334,281 08/1967 Ditrick 3,476,619 11/1969 Tolliver
National Museum of American History
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