Abstract of the Disclosure

Method of doping a semiconductor body by applying a layer of the desired dopant on the surface of the semiconductor, irradiating this dopant layer with a beam of inert ions to drive atoms of the dopant into the semiconductor body.

• Figure 1 is a partial cross-sectional elevational view of a semiconductor body having a dopant layer on the surface thereof during irradiation by a beam of inert ions.
• Figure 2 is a similar view of a semiconductor body shown in Figure 1 after implantation of the dopant material therein and with the dopant layer removed therefrom.
• Figure 3 is a process step flow chart of the method of the invention.

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