United States Patent 3,562,022
February 9, 1971

Method Of Doping Semiconductor Bodies By Indirect Ion Implantation
Gordon A. Shifrin

Filed December 26, 1967
Image of US PATENT 3,562,022

Abstract of the Disclosure

Method of doping a semiconductor body by applying a layer of the desired dopant on the surface of the semiconductor, irradiating this dopant layer with a beam of inert ions to drive atoms of the dopant into the semiconductor body.
Figure descriptions: cover graphic

  • Figure 1 is a partial cross-sectional elevational view of a semiconductor body having a dopant layer on the surface thereof during irradiation by a beam of inert ions.
  • Figure 2 is a similar view of a semiconductor body shown in Figure 1 after implantation of the dopant material therein and with the dopant layer removed therefrom.
  • Figure 3 is a process step flow chart of the method of the invention.

 Citations [54]:
3,290,189 12/1966 Migitaka 3,317,354 /1967 Darrow et al 3,457,632 07/1969 Dolan, Jr. et al
National Museum of American History
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