United States Patent 3,615,934
October 26, 1971

Insulated-Gate Field-Effect Device Having Source And Drain Regions Formed In Part By Ion Implantation And Method Of Making Same
Robert W. Bower

Filed October 30, 1967
Image of US PATENT 3,615,934

Abstract of the Disclosure

Field effect device having diffused major source and drain regions spaced from each other on a common surface of a semiconductor body with insulated gate member disposed on same surface and spaced from and between the source and drain regions, and shallow regions formed by ion implantation using the gate member as a mask extending from the periphery of the gate member to the source and drain regions.
Figure descriptions: cover graphic

  • a cross-sectional elevational view of an embodiment of the invention in which major source and drain regions are formed by diffusion and extended to the gate by ion implated shallow regions.

 Citations [54]:
3,102,230 08/1963 Kahng 3,434,894 06/1969 Gole 3,290,567 12/1966 Gowen 3,449,648 06/1969 Beale 3,341,754 09,1969 Kellett et al 3,434,021 03/1969 Hofstein 3,341,754 09/1967 Kellett
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments