Abstract of the Disclosure

Field effect device having diffused major source and drain regions spaced from each other on a common surface of a semiconductor body with insulated gate member disposed on same surface and spaced from and between the source and drain regions, and shallow regions formed by ion implantation using the gate member as a mask extending from the periphery of the gate member to the source and drain regions.

• a cross-sectional elevational view of an embodiment of the invention in which major source and drain regions are formed by diffusion and extended to the gate by ion implated shallow regions.

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