United States Patent 3,617,767
November 2, 1971

Field-Effect Transistor Logic Gate With Isolation Device For Reducing Power Dissipation
Robert Kenneth Booher

Filed Februay 11, 1970
Image of US PATENT 3,617,767

Abstract of the Disclosure

The invention relates to a field-effect-transistor logic gate usable in multiple phase logic gating systems and more particularly to such a logic gate in which an isolation device is used to reduce power dissipation.
Figure descriptions: cover graphic

  • an illustration of a logic gate implemented with field effect transistors and having an isolation field effect transistor connected between one terminal of a logic network and electrical ground.

 Citations [54]:
3,461,312 08/1969 Farber et al 3,526,783 09/1970 Booher 3,497,715 02/1970 Yen
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