Abstract of the Disclosure

A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.

• Figure 1 is a top plan view of a portion of one type of semiconductor device of the present invention.
• Figure 2 is a sectional view of the device of Figure 1 and taken along line 10-10 of Figure 1 with the vertical scale being approximately ten times the horizontal scale.

 Citations [54]:
  
3,354,360  11/1967  Campagna et al
3,786,318  01/1974  Monoi et al
3,492,174  01/1970  Nakamura et al
3,906,544  09/1975  Engeler et al
3,509,433  04/1970  Schroeder
3,648,125  03/1972  Peltzer
3,783,047  01/1974  Paffew et al