United States Patent 3,961,355
June 1, 1976

Semiconductor Device Having Electrically Insulating Barriers For Surface Leakage Sensitive Devices And Method Of Forming
Shakir A. Abas
Chi S. Chang
Leo B. Freeman, Jr.
Ronald W. Knepper

Filed November 18, 1974
Image of US PATENT 3,961,355

Abstract of the Disclosure

A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.
Figure descriptions: cover graphic

  • Figure 1 is a top plan view of a portion of one type of semiconductor device of the present invention.
  • Figure 2 is a sectional view of the device of Figure 1 and taken along line 10-10 of Figure 1 with the vertical scale being approximately ten times the horizontal scale.

 Citations [54]:
3,354,360 11/1967 Campagna et al 3,786,318 01/1974 Monoi et al 3,492,174 01/1970 Nakamura et al 3,906,544 09/1975 Engeler et al 3,509,433 04/1970 Schroeder 3,648,125 03/1972 Peltzer 3,783,047 01/1974 Paffew et al
National Museum of American History
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