Abstract of the Disclosure

Germanium semiconductor temperature switches are described which are capable of intrinsically switching between high and low resistance states within a temperature range up to 55°C, and are adapted for operating at voltages up to 400 volts. These temperature switches are disclosed in various configurations. Basic circuits for adjusting the temperatures at which such switches switch within a range are disclosed. Preferred methods of making the same are also disclosed.

• Figure 1 depicts a form of bilateral semiconductor temperature switch constructed in accordance with the invention.
• Figure 2 schematically depicts a gate controlled bilateral STS in an energizing control circuit for an electric motor.

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3,166,680  01/1965  Kevane et al