United States Patent 4,112,458
September 5, 1978

Silicon Thyristor Sensitive To Low Temperature With Thermal Switching Characteristics At Temperatures Less Than 50 C
Stanley V. Jaskolski
Robert W. Lade
Herman P. Schutten
Grodon B. Spellman

Filed January 26, 1976
Image of US PATENT 4,112,458

Abstract of the Disclosure

Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30 C to +150 C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50 C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature.
Figure descriptions: cover graphic

  • Figure 1 is a schematic of a generic embodiment of a switch constructed in accordance with the invention.
  • Figure 2 is a graph of breakover voltage versus temperature, illustrating the temperature dependence of the breakover voltage of a switch constructed in accordance with the invention.

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