United States Patent 4,132,550
January 2, 1979

Photoresists With Particles Less Than One Micron
Ronald R. Bowman

Filed November 24, 1976
Image of US PATENT 4,132,550

Abstract of the Disclosure

A germanium mesa transistor is fabricated having an epitaxilly grown base region and an aluminum alloy emitter in the epitaxially grown layer spaced from the collector junction, and having a gold-comprising base electrode surrounding the emitter and closely spaced therefrom. The gold contact is formed by photolithographic and selective etching techniques, followed by the formation of the aluminum emitter, which is also formed by photolithographic and selective etching techniques. A key step is the selective removal of the aluminum from the germanium wafer without disturbing the gold contact
Figure descriptions: cover graphic

  • a perspective view of a semiconductor device of the invention shown with leads attached.

 Citations [54]:
3,079,254 02/1963 Rowe
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments