United States Patent 4,134,123
January 9, 1979

High Voltage Schottky Barrier Diode
John M. Shannon

Filed July 21, 1977
Image of US PATENT 4,134,123

Abstract of the Disclosure

An improved high voltage Schottky barrier diode includes a semiconductor layer having two adjacent sublayers of the same type conductivity but different doping concentrations. A plurality of isolated discrete regions of a second type conductivity opposite to that of the first are provided along the boundary region between the sublayers and beneath the Schottky junction. The invention results in an improved high voltage Schottky diode in which the reverse characteristics are substantially enhanced
Figure descriptions: cover graphic

  • shows in cross section part of the semiconductor body and applied layer of a first embodiment of a semiconductor device in accordance with the invention.

 Citations [54]:
3,252,003 05/1966 Schmidt 3,513,366 05/1970 Clark 3,614,560 10/1971 Anantha 3,646,411 02/1972 Iwasa 3,999,281 12/1976 Goronkin et al
National Museum of American History
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