United States Patent 4,135,998
January 23, 1979

Method For Forming Pt-Si Schottky Barrier Contact
John J. Gniewek
Timothy M. Reith
Michael J. Sullivan
James F. White

Filed April 26, 1978
Image of US PATENT 4,135,998

Abstract of the Disclosure

Use of a rare gas in combination with oxygen or nitrogen to sputter etch unreacted platinum after formation of a platinum silicide contact structure for the formation of a Schottky Barrier diode in a silicon semiconductor substrate
Figure descriptions: cover graphic

  • a diagrammatic, cross-sectional view of a portion of an integrated circuit encompassing a Schottky barrier structure illustrating one step in the fabrication thereof.

 Citations [54]:
3,642,548 02/1972 Eger 3,927,225 12/1975 Cordes et al 3,770,606 11/1973 Lepselter 3,956,527 05/1976 Magdo et al 3,855,612 12/1974 Rosvold 3,968,019 07/1976 Hanazono et al 3,906,540 09/1975 Hollins 3,975,252 08/1976 Fraser et al 3,913,213 10/1975 Mills et al 3,995,301 11/1976 Magdo 3,923,568 12/1975 Bersin 4,082,637 04/1978 Misiano et al
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments