PATENT COVER GRAPHIC

United States Patent 4,136,353
January 23, 1979

Biopolar Transistor With High-Low Emitter Impurity Concentration
Murray A. Polinsky

Filed May 23, 1977
Image of US PATENT 4,136,353

Abstract of the Disclosure

An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region
Figure descriptions: cover graphic

  • Figure 1 is a cross-sectional view showing a monolithic integrated circuit device having the present improved transistor as an element thereof.
  • Figure 2 is an impurity-concentration profile illustrating a typical depth distribution of conductivity modifiers taken at one location along the cross-sectional view shown in Figure 1. 

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3,943,554  03/1976  Russell et al
2,251,916  06/1975  France
4,039,857  08/1947  Ahmed
1,355,806  06/1974  United Kingdom
4,049,478  09/1977  Ghosh et al
1,460,037  12/1976  United Kingdom
National Museum of American History
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