United States Patent 4,136,353
January 23, 1979

Biopolar Transistor With High-Low Emitter Impurity Concentration
Murray A. Polinsky

Filed May 23, 1977
Image of US PATENT 4,136,353

Abstract of the Disclosure

An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region
Figure descriptions: cover graphic

  • Figure 1 is a cross-sectional view showing a monolithic integrated circuit device having the present improved transistor as an element thereof.
  • Figure 2 is an impurity-concentration profile illustrating a typical depth distribution of conductivity modifiers taken at one location along the cross-sectional view shown in Figure 1.

 Citations [54]:
3,943,554 03/1976 Russell et al 2,251,916 06/1975 France 4,039,857 08/1947 Ahmed 1,355,806 06/1974 United Kingdom 4,049,478 09/1977 Ghosh et al 1,460,037 12/1976 United Kingdom
National Museum of American History
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